Skip to main content

NTH4L040N120M3S

ActiveSiC / GaN Wide-Bandgap封装 TO-247

Silicon Carbide (SiC) MOSFET

Manufacturer: onsemi
Package: TO-247
Datasheet: 9 pages · 414 KB
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

NTH4L040N120M3S Key Specifications

Source: manufacturer datasheet

封装	TO-247

Technical Documents

1 document

Datasheet

NTH4L040N120M3S - Silicon Carbide (SiC) MOSFET
9 pages414 KBONSEMI-NTH4L040N120M3S.pdf

Alternatives

0 parts

No alternatives listed for NTH4L040N120M3S yet.

Where to buy

Prices and stock are set by each distributor

Same Series

NTH4L040N120SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

More from onsemi

NCP58920Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26
NCP58921Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mΩ, 30 A, TQFN26
NCP58922Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26
NCP58933ABTEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection
NCP58934ABLEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9
NCP58935ABT.revP1
NDC10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die
NDC25170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die
NDSH10120CSilicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
NDSH20120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

Order codes / Aliases

NTH4L040N120M3