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NTH4L028N170M1

ActiveSiC / GaN Wide-BandgapRDS(on) 28 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L

Manufacturer: onsemi
Package: TO-247
Datasheet: 8 pages · 275 KB
Website: www.onsemi.com

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NTH4L028N170M1 Key Specifications

Source: manufacturer datasheet

RDS(on)	28 mΩ
封装	TO-247

Technical Documents

1 document

Datasheet

NTH4L028N170M1 - Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
8 pages275 KBONSEMI-NTH4L028N170M1.pdf

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