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NTH4L025N065SC1

ActiveSiC / GaN Wide-BandgapRDS(on) 19 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L

Manufacturer: onsemi
Package: TO-247
Datasheet: 8 pages · 319 KB
Website: www.onsemi.com

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NTH4L025N065SC1 Key Specifications

Source: manufacturer datasheet

RDS(on)	19 mΩ
封装	TO-247

Technical Documents

1 document

Datasheet

NTH4L025N065SC1 - Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L
8 pages319 KBONSEMI-NTH4L025N065SC1.pdf

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