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NTBL050N65GN1

ActiveSiC / GaN Wide-BandgapVDS 650 VID 40 ARDS(on) 39 mΩ

Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 39 mohm, 40 A, PDSO-F9

Manufacturer: onsemi
Datasheet: 10 pages · 380 KB
Website: www.onsemi.com

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NTBL050N65GN1 Key Specifications

Source: manufacturer datasheet

VDS	650 V
ID	40 A
RDS(on)	39 mΩ

Technical Documents

1 document

Datasheet

NTBL050N65GN1 - Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 39 mohm, 40 A, PDSO-F9
10 pages380 KBONSEMI-NTBL050N65GN1.pdf

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Order codes / Aliases

NTBL050N65GN1TXG