Skip to main content

NTBL023N65GN1

UnknownSiC / GaN Wide-BandgapVDS 650 VID 92 ARDS(on) 16 mΩ

Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 16 mΩ, 92 A, PDSO‐F9

Manufacturer: onsemi
Datasheet: 6 pages · 539 KB · Rev. P1
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

NTBL023N65GN1 Key Specifications

Source: manufacturer datasheet

VDS	650 V
ID	92 A
RDS(on)	16 mΩ

Technical Documents

1 document

Datasheet

NTBL023N65GN1 - Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 16 mΩ, 92 A, PDSO‐F9
6 pages539 KBRev. P12026-07-01ONSEMI-NTBL023N65GN1.pdf

Alternatives

0 parts

No alternatives listed for NTBL023N65GN1 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from onsemi

NTBL032N065M3SSilicon Carbide (SiC) MOSFET
NTBL035N65GN1Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 27 mohm, 64 A, PDSO-F9
NTBL045N065M3SSilicon Carbide (SiC) MOSFET
NTBL045N065SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TOLL
NTBL050N65GN1Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 39 mohm, 40 A, PDSO-F9
NTBL060N065SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL
NTBL075N065SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL
NTBT035N65GN1Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 27 mohm, 64 A, PDSO-G16
NTBT050N65GN1Enhancement Mode Gallium Nitride (GaN) HEMT 650 V, 39 mohm, 40 A, PDSO-G16
NTC020N120SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, Die
NTC040N120SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, Die
NTC080N120SC1Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200 V, M1, Die