分立器件

Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package

Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package

Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package

Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package

Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247 long leads package

RF and microwave transistors HF SSB applications

RF and microwave transistors HF SSB applications

HF SSB applications RF & microwave transistors

50 V moisture resistant DMOS transistor for ISM applications

700 V, 53 mΩ typ., 26 A, e-mode PowerGaN transistor

700 V, 60 mΩ typ., 29 A, e-mode PowerGaN transistor

700 V, 74 mΩ typ., 21 A, e-mode PowerGaN transistor

700 V, 80 mΩ typ., 21.7 A, e-mode PowerGaN transistor

700 V, 97 mΩ typ., 16 A, e-mode PowerGaN transistor

700 V, 106 mΩ typ., 17 A, e-mode PowerGaN transistor

700 V, 138 mΩ typ., 11.5 A, e-mode PowerGaN transistor

100 V, 1.1 mΩ typ., 501 A, e-mode PowerGaN transistor

700 V, 165 mΩ typ., 10 A, e-mode PowerGaN transistor

700 V, 165 mΩ typ., 10 A, e-mode PowerGaN transistor

700 V, 270 mΩ typ., 6 A, e-mode PowerGaN transistor