N-channel 250 V, 14.5 mΩ typ., 85 A MDmesh M9 Power MOSFET in a TO‑LL package
厂商 意法半导体封装 TO2471 份文档N-channel 600 V, 23 mΩ typ., 74 A MDmesh M9 Power MOSFET in a TO‑LL package
厂商 意法半导体封装 TO-2471 份文档N-channel 600 V, 24 mΩ typ., 72 A MDmesh DM9 Power MOSFET in a TO‑LL package
厂商 意法半导体封装 TO-2471 份文档N‑channel 600 V, 35 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO‑LL package
厂商 意法半导体封装 TO-2471 份文档N-channel 650 V, 24.7 mΩ typ., 72 A MDmesh M9 Power MOSFET in a TO‑LL package
厂商 意法半导体封装 TO-2471 份文档N‑channel 600 V, 46 mΩ typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package
厂商 意法半导体封装 TO-2471 份文档N-channel 600 V, 45 mΩ typ., 57 A MDmesh M6 Power MOSFET in a TO‑LL package
厂商 意法半导体封装 TO-2471 份文档- 厂商 安森美封装 TO-2631 份文档
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- 1 份文档
- 厂商 安森美封装 TO-2201 份文档
- 厂商 安森美封装 TO-2201 份文档
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L
厂商 安森美封装 TO-2471 份文档Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L
厂商 安森美封装 TO-2471 份文档