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Automotive 20 A 650 V power Schottky silicon carbide diode
厂商 意法半导体封装 TO-2471 份文档- 1 份文档
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Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247‐4L
厂商 安森美封装 TO2471 份文档- 1 份文档
Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4L
厂商 安森美封装 TO-2471 份文档- 1 份文档
- 1 份文档
Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L
厂商 安森美封装 TO-2471 份文档Automotive-grade N-channel 40 V, 4.3 m typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220
厂商 意法半导体封装 TO-2201 份文档Automotive N-channel 55 V, 6.5 mΩ typ., 80 A STripFET II Power MOSFETs in D²PAK and TO-220 packages
厂商 意法半导体封装 TO-2201 份文档Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages
厂商 意法半导体封装 TO-2201 份文档Automotive-grade N-channel 650 V, 83 mΩ typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package
厂商 意法半导体封装 TO-2471 份文档