“B” 共 23 个型号· 223 ms

排序相关度热度型号 A-Z
AEC-Q101 TO DIP LQFP 清除筛选
  • BU931P车规级AEC-Q101

    Automotive-grade high voltage ignition coil driver NPN power Darlington transistor

    厂商 意法半导体封装 TO-247封装 TO-247
    1 份文档
  • BU931T车规级AEC-Q101

    Automotive-grade high voltage ignition coil driver NPN power Darlington transistor

    厂商 意法半导体封装 TO-220封装 TO-220
    1 份文档
  • STB100NF04T4车规级AEC-Q101

    Automotive-grade N-channel 40 V, 4.3 m typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • STB141NF55车规级AEC-Q101

    Automotive N-channel 55 V, 6.5 mΩ typ., 80 A STripFET II Power MOSFETs in D²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 55 VID 80 A
    1 份文档
  • STB36NF06L车规级AEC-Q101

    Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 60 VID 30 A
    1 份文档
  • GWA75H65DRFB2AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 75 A
    1 份文档
  • STGWA80H65DFBAG车规级AEC-Q101

    Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

    厂商 意法半导体封装 TO-247VDS 650 VID 80 A
    1 份文档
  • STGWA80H65FBAG车规级AEC-Q101

    Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

    厂商 意法半导体封装 TO-247VDS 650 VID 80 A
    1 份文档
  • MJD31CT4-A车规级AEC-Q101

    Automotive-grade low voltage NPN power transistor

    厂商 意法半导体封装 TO-252封装 TO-252
    1 份文档
  • MJD32CT4-A车规级AEC-Q101

    Automotive-grade low voltage PNP power transistor

    厂商 意法半导体封装 TO-252封装 TO-252
    1 份文档
  • STGWA60V60DWFAG车规级AEC-Q101

    Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

    厂商 意法半导体封装 TO-247VDS 600 VID 60 A
    1 份文档
  • STPSC20H065C-Y车规级AEC-Q101

    Automotive 650 V power Schottky silicon carbide diode

    厂商 意法半导体封装 TO-220AB封装 TO-220AB
    1 份文档
  • STPSC20H065CWLY车规级AEC-Q101

    Automotive 20 A 650 V power Schottky silicon carbide diode

    厂商 意法半导体封装 TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 份文档
  • STPSC20H12CWY车规级AEC-Q101

    20 A 1200 V power Schottky silicon carbide diode

    厂商 意法半导体封装 TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 份文档
  • STPSC31H12C-Y车规级AEC-Q101

    2 X 15 A, 1200 V power Schottky silicon carbide diode

    厂商 意法半导体封装 TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 份文档
  • STPSC40065C-Y车规级AEC-Q101

    Automotive 650 V power Schottky silicon carbide diode

    厂商 意法半导体封装 TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 份文档
  • STPSC40H12C-Y车规级AEC-Q101

    40 A 1200 V power Schottky silicon carbide diode

    厂商 意法半导体封装 TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 份文档
  • NVH4L012N065M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247‐4L

    厂商 安森美封装 TO247RDS(on) 12 mΩ封装 TO247
    1 份文档
  • NVH4L016N065M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • NVH4L022N120M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 22 mΩ封装 TO-247
    1 份文档