“G” 共 377 个型号· 310 ms

排序相关度热度型号 A-Z
分立器件 TO 清除筛选
  • GWA40MS120DF4AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA40MS120DLAG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT and ultra-low reverse losses in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA40MS120F4AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA75H65DRFB2

    Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 75 A
    1 份文档
  • GWA75H65DRFB2AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 75 A
    1 份文档
  • NGTB40N120FL2W

    IGBT – Field Stop II

    厂商 安森美封装 TO-247封装 TO-247
    1 份文档
  • NGTB75N65FL2W

    IGBT – FS2 Solar/UPS, 650 V, 75 A

    厂商 安森美封装 TO-247VDS 650 VID 75 A
    1 份文档
  • UG3SC120009K4S

    Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, TO247‐4, 1200 V, 8.8 mohm

    厂商 安森美封装 TO247RDS(on) 8.8 mΩ封装 TO247
    1 份文档
  • UG4SC075006K4S

    Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, TO247‐4, 750 V, 5.9 mohm

    厂商 安森美封装 TO247RDS(on) 5.9 mΩ封装 TO247
    1 份文档
  • UG4SC075009K4S

    Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, TO247‐4, 750 V, 8.4 mohm

    厂商 安森美封装 TO247RDS(on) 8.4 mΩ封装 TO247
    1 份文档
  • UG4SC075011K4S

    Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, TO247‐4, 750 V, 11 mohm

    厂商 安森美封装 TO247RDS(on) 11 mΩ封装 TO247
    1 份文档
  • STGF10M65DF2

    Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

    厂商 意法半导体封装 TO-220FPVDS 650 VID 10 A
    1 份文档
  • STGF15M65DF2

    Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package

    厂商 意法半导体封装 TO-220FPVDS 650 VID 15 A
    1 份文档
  • STGF20H65DFB2

    Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑220FP package

    厂商 意法半导体封装 TO-220FPVDS 650 VID 20 A
    1 份文档
  • STGF20M65DF2

    Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

    厂商 意法半导体封装 TO-220FPVDS 650 VID 20 A
    1 份文档
  • STGF30H65DFB2

    Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220FP package

    厂商 意法半导体封装 TO-220FPVDS 650 VID 30 A
    1 份文档
  • STGF30M65DF2

    Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

    厂商 意法半导体封装 TO-220FPVDS 650 VID 30 A
    1 份文档
  • STGF4M65DF2

    Trench gate field-stop IGBT, M series 650 V, 4 A low loss

    厂商 意法半导体封装 TO-220FPVDS 650 VID 4 A
    1 份文档
  • STGF6M65DF2

    Trench gate field-stop IGBT, M series 650 V, 6 A low loss

    厂商 意法半导体封装 TO-220FPVDS 650 VID 6 A
    1 份文档
  • STGFW20H65FB

    Trench gate field-stop 650 V, 20 A high speed HB series IGBT

    厂商 意法半导体封装 TO-247VDS 650 VID 20 A
    1 份文档