SCT070H120G3AG

量产SiC / GaN 宽禁带器件VDS 1200 VID 30 ARDS(on) 63 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

SCT070H120G3AG 主要参数

来源：原厂数据手册

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价格与库存以渠道为准

SCT070H120G3-7Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

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SCT070H120G3SCT070H120G3A