NVVR26A120M1WSS

量产SiC / GaN 宽禁带器件RDS(on) 2.6 mΩ

Silicon Carbide (SiC) Module – EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6 mohm, 1200 V, Half-Bridge, 90° Power Tabs

NVVR26A120M1WSS 主要参数

来源：原厂数据手册

RDS(on)	2.6 mΩ

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价格与库存以渠道为准

NVVR26A120M1WSBSilicon Carbide (SiC) Module – EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6 mohm, 1200V, Half-Bridge, Straight Power Tabs
NVVR26A120M1WSTSilicon Carbide (SiC) Module – EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6 mohm, 1200 V, Half-Bridge, 90° Power Tabs

NCP58920Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26
NCP58921Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mΩ, 30 A, TQFN26
NCP58922Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26
NCP58933ABTEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection
NCP58934ABLEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9
NCP58935ABT.revP1
NDC10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die
NDC25170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die
NDSH10120CSilicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
NDSH20120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

NVVR26A120M1NVVR26A120M1WNVVR26A120M1WS