NTCR013N120M3S-DIE

量产SiC / GaN 宽禁带器件RDS(on) 13 mΩ

Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die

NTCR013N120M3S-DIE 主要参数

来源：原厂数据手册

RDS(on)	13 mΩ

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