MRF6S18060

Name: MRF6S18060
Brand: NXP

停产通知射频功率器件

1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

技术文档

1 份文档

0 个

暂未收录 MRF6S18060 的替代料信息。

价格与库存以渠道为准

MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
MRF6S18100NR1, MRF6S18100NBR1 1805-1990 MHz, 100 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
MRF6S18140H1805-1880 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19060NR1, MRF6S19060NBR1 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19100HR3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19100NR1, MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19120H1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19200HR3, MRF6S19200HSR3 1930-1990 MHz, 56 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

MRF9030LR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
MW4IC20201805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA, RF LDMOS Wideband Integrated Power Amplifiers
A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
A2I35H060N3400-3600 MHz, 10 W Avg, 28 V Data Sheet
A2T08VD021N728-960 MHz, 2 W Avg, 48 V Data Sheet
A2T14H450-23N1427-1517 MHz, 93 W Avg, 31 V Data Sheet
A2V07H400-04N420-851 MHz, 107 W Avg, 48 V Data Sheet
AFIC10275NAFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet
AFIC31025N25 W Pulse over 2400-3100 MHz, 32 V Data Sheet
AFIC901N30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet
BFG10XBFG10; BFG10/X NPN 2 GHz RF power transistor

MRF6S18060MBR1MRF6S18060MR1