AFIC10275N

Name: AFIC10275N
Brand: NXP

量产射频功率器件

AFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet

技术文档

1 份文档

0 个

暂未收录 AFIC10275N 的替代料信息。

价格与库存以渠道为准

暂无

AFIC31025N25 W Pulse over 2400-3100 MHz, 32 V Data Sheet
MHVIC910HR2960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit
MMRF2010N1030-1090 MHz, 250 W Peak, 50 V Data Sheet
MRF1511175 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF9030LR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
MRF9060NR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
MW4IC20201805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA, RF LDMOS Wideband Integrated Power Amplifiers
MW4IC22302110-2170 MHz, 30 W, 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers
MW4IC915860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers
A2I08H040N728-960 MHz, 9 W Avg, 28 V Data Sheet
A2I09VD015N575-960 MHz, 2 W Avg, 48 V Data Sheet
A2I09VD050N575-960 MHz, 6.3 W Avg, 48 V Data Sheet

AFIC10275AFIC10275NR1