A2I09VD015N

Name: A2I09VD015N
Brand: NXP

量产射频功率器件

575-960 MHz, 2 W Avg, 48 V Data Sheet

技术文档

1 份文档

0 个

暂未收录 A2I09VD015N 的替代料信息。

价格与库存以渠道为准

A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
AFIC901N30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet
MHV5IC1810NR2 1805-1990 MHz, 5 W Avg., 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier
MMRF1006H10-500 MHz, 1000 W, 50 V Data Sheet
MMRF1013H2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs
MRF1550T1175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs
MRF373470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
MRF5S21100H2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19100HR3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19120H1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
MRF9060-2MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

A2I09VD015A2I09VD015NR1