A2I20H060N

Name: A2I20H060N
Brand: NXP

量产射频功率器件

1800-2200 MHz, 12 W Avg, 28 V Data Sheet

技术文档

1 份文档

0 个

暂未收录 A2I20H060N 的替代料信息。

价格与库存以渠道为准

A2I35H060N3400-3600 MHz, 10 W Avg, 28 V Data Sheet
A2T08VD021N728-960 MHz, 2 W Avg, 48 V Data Sheet
AFIC10275NAFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet
AFIC31025N25 W Pulse over 2400-3100 MHz, 32 V Data Sheet
MHL213362110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier
MHL9236800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers
MHVIC910HR2960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit
MMRF2010N1030-1090 MHz, 250 W Peak, 50 V Data Sheet
MRF1511175 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1511NT1 175 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1535T1520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs
MRF18030A1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

A2I20H060A2I20H060NR1