MMRF2006N

Name: MMRF2006N
Brand: NXP

量产射频功率器件封装 PQFN

1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier

MMRF2006N 主要参数

来源：原厂数据手册

封装	PQFN

1 份文档

0 个

暂未收录 MMRF2006N 的替代料信息。

价格与库存以渠道为准

MMRF2004NB2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier
MMRF2005N728-960 MHz, 3.2 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet
MMRF2007N136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet
MMRF2010N1030-1090 MHz, 250 W Peak, 50 V Data Sheet

A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
A2I35H060N3400-3600 MHz, 10 W Avg, 28 V Data Sheet
A2T08VD021N728-960 MHz, 2 W Avg, 48 V Data Sheet
A2T14H450-23N1427-1517 MHz, 93 W Avg, 31 V Data Sheet
A2V07H400-04N420-851 MHz, 107 W Avg, 48 V Data Sheet
AFIC10275NAFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet
AFIC31025N25 W Pulse over 2400-3100 MHz, 32 V Data Sheet
AFIC901N30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet
BFG10XBFG10; BFG10/X NPN 2 GHz RF power transistor
MHL213362110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier
MHL9236800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers

MMRF2006