A2T21H360-23N

Name: A2T21H360-23N
Brand: NXP

量产射频功率器件

2110-2200 MHz, 63 W Avg, 28 V Data Sheet

技术文档

1 份文档

0 个

暂未收录 A2T21H360-23N 的替代料信息。

价格与库存以渠道为准

A2T21H360-24SR6 2110-2170 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor Data Sheet

MRF9060-2MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
MMRF2007N136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet
A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
AFIC10275NAFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet
AFIC901N30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet
MHL9236800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers
MHL9838N800-925 MHz, 8.0 W, 31 dB RF Linear LDMOS Amplifier
MMRF2010N1030-1090 MHz, 250 W Peak, 50 V Data Sheet
MRF1518520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET
MRF1535T1520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs
MRF18030A-21800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

A2T21H36023