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收录 12,364 个型号原厂官网

共 300 个型号· 146 ms

  • Intelligent Power Module (IPM) 1200 V, 10 A

    封装 DIP39VDS 1200 VID 10 A
    1 份文档
  • Intelligent Power Module (IPM) 650 V, 30 A

    封装 DIP39VDS 650 VID 30 A
    1 份文档
  • Quad Driver

    封装 PDIP-16封装 PDIP-16
    1 份文档
  • 封装 TO-263封装 TO-263
    1 份文档
  • P-Channel Logic Level Enhancement Mode Field Effect Transistor

    封装 TO-220封装 TO-220
    1 份文档
  • This N-Channel Power MOSFET is produced using ON Semiconductor’s

    封装 TO-220封装 TO-220
    1 份文档
  • 封装 TO-220封装 TO-220
    1 份文档
  • 封装 TO-220封装 TO-220
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • 封装 TO-247封装 TO-247
    1 份文档