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收录 12,364 个型号原厂官网

共 248 个型号· 88 ms

  • This N-Channel Power MOSFET is produced using ON Semiconductor’s

    封装 TO-220封装 TO-220
    1 份文档
  • 封装 TO-220封装 TO-220
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • 封装 TO-3P封装 TO-3P
    1 份文档
  • IGBT – Field Stop II

    封装 TO-247封装 TO-247
    1 份文档
  • IGBT – FS2 Solar/UPS, 650 V, 75 A

    封装 TO-247VDS 650 VID 75 A
    1 份文档
  • Complementary ThermalTrak™ Transistors

    封装 TO-264封装 TO-264
    1 份文档