Skip to main content

MRF19085-1

EOL noticeRF Power

1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

Manufacturer: NXP
Datasheet: 11 pages · 669 KB
Website: www.nxp.com

Wrong information or a copyright issue? Let us know

Technical Documents

1 document

Datasheet

MRF19085LSR3 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET - Archived
11 pages669 KBNXP-MRF190851.pdf

Alternatives

0 parts

No alternatives listed for MRF19085-1 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

MRF190301930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
MRF19030-11930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET
MRF19030-21930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET
MRF190451930-1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETs
MRF190601930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs
MRF190851930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
MRF19085-21930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET
MRF190901930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET
MRF191201990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET
MRF191251930-1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFET

More from NXP

A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
AFIC901N30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet
MHL21336NN2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier
MHV5IC1810NR2 1805-1990 MHz, 5 W Avg., 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier
MHVIC910HR2960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit
MMRF1006H10-500 MHz, 1000 W, 50 V Data Sheet
MMRF1013H2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs
MRF1513NT1 520 MHz, 3 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1517520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET
MRF1550T1175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs
MRF1570T1470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs