Skip to main content

MHV5IC1810N

ActiveRF Power

R2 1805-1990 MHz, 5 W Avg., 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier

Manufacturer: NXP
Datasheet: 17 pages · 1.2 MB
Website: www.nxp.com

Wrong information or a copyright issue? Let us know

Technical Documents

1 document

Datasheet

MHV5IC1810NR2 1805-1990 MHz, 5 W Avg., 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier
17 pages1.2 MBNXP-MHV5IC1810N.pdf

Alternatives

0 parts

No alternatives listed for MHV5IC1810N yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from NXP

A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
MRF6S19120H1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
MRF9060-2MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
MRFE6VP61K25NMRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet
MRFG35010MT13.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
MMRF2007N136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet
MRF6S19100HR3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MW4IC001NR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers
A2I35H060N3400-3600 MHz, 10 W Avg, 28 V Data Sheet
A2T08VD021N728-960 MHz, 2 W Avg, 48 V Data Sheet
A2T14H450-23N1427-1517 MHz, 93 W Avg, 31 V Data Sheet

Order codes / Aliases

MHV5IC1810