Skip to main content

BGA6130

ActiveRF Power封装 BGA6130

400 MHz to 2700 MHz 1 W high efficiency silicon amplifier

Manufacturer: NXP
Package: BGA6130
Datasheet: 27 pages · 737 KB
Website: www.nxp.com

Wrong information or a copyright issue? Let us know

BGA6130 Key Specifications

Source: manufacturer datasheet

封装	BGA6130

Technical Documents

1 document

Datasheet

BGA6130 400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
27 pages737 KB BookmarkedNXP-BGA6130.pdf

Alternatives

0 parts

No alternatives listed for BGA6130 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

BGA6289MMIC wideband medium power amplifier
BGA6489MMIC wideband medium power amplifier
BGA6589MMIC wideband medium power amplifier

More from NXP

MRF18060A-21805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET
MRFG35002N63.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT
A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
AFIC901N30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet
MHL183361800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier
MHL199261930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier
MHL21336NN2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier
MHV5IC1810NR2 1805-1990 MHz, 5 W Avg., 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier
MHVIC910HR2960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit
MMRF1004N1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
MMRF1005H1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs