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15 parts· 2038 ms

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  • MC12026ANRNDIndustrial

    Technical Data Sheet

    工作温度 -40 ~ 85 °C
    1 document
  • MC13191NRNDIndustrial

    untitled

    Package QFN-32工作温度 -40 ~ 85 °C封装 QFN-32
    1 document
  • MC13192NRNDIndustrial

    untitled

    Package QFN-32工作温度 -40 ~ 85 °C封装 QFN-32
    1 document
  • MC3361BNRND

    Technical Data Sheet

    工作温度 -30 ~ 70 °C
    1 document
  • MC3361CNRND

    Technical Data Sheet

    工作温度 -30 ~ 70 °C
    1 document
  • MMBR901LT1NRND

    Technical Data Sheet

    1 document
  • MMG3002NT1NRND

    Data Sheet

    1 document
  • MRF282-2NRND

    MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

    1 document
  • MRF373ANRND

    LR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs

    1 document
  • MRF9030NNRND

    R1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

    1 document
  • MRF9030NRND

    LR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

    1 document
  • MRF9045NNRND

    R1, 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

    1 document
  • MRF9060-2NRND

    MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

    1 document
  • MRF9060NNRND

    R1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

    1 document
  • MRF9135L-2NRND

    MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFET

    1 document