Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT and ultra-low reverse losses in a TO-247 long leads package

Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Datasheet- DS12835- GPS/Glonass/BeiDou2/QZSS ROM receiver

Multiprotocol wireless 32-bit MCU Arm<Sup>®</Sup>-based Cortex<Sup>®</Sup>-M4 with FPU, Bluetooth<Sup>®</Sup> 5.4 radio solution

Multiprotocol wireless 32-bit MCU Arm<Sup>®</Sup>-based Cortex<Sup>®</Sup>-M4 with FPU, Bluetooth<Sup>®</Sup> 5.4 and 802.15.4 radio solution

Multiprotocol wireless 32-bit MCU Arm<Sup>®</Sup>-based Cortex<Sup>®</Sup>-M33 with TrustZone<Sup>®</Sup>, FPU, Bluetooth<Sup>®</Sup> LE and IEEE 802.15.4 radio solution

Multiprotocol wireless 32-bit MCU Arm<Sup>®</Sup>-based Cortex<Sup>®</Sup>-M33 with TrustZone<Sup>®</Sup>, FPU, Bluetooth<Sup>®</Sup> LE, IEEE802.15.4 radio solution

Dual-band 1x1 Wi-Fi 4 and Bluetooth Combo SoC

Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

Automotive 20 A 650 V power Schottky silicon carbide diode

NPN power Darlington transistor

Complementary silicon power Darlington transistors

Complementary silicon power Darlington transistors

N-channel 1000 V, 0.83 Ω typ., 8.3 A SuperMESH Power MOSFET in a TO-247 package

N-channel 900 V, 820 mΩ typ., 9.2 A SuperMESH Power MOSFET in a TO-247 package

N-channel 100 V, 9.0 m typ., 110 A STripFET™ II Power MOSFETs in D²PAK, TO-220 and TO-247 packages

N-channel 1500 V, 1.6 Ω typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package