“4” 共 481 个型号· 1046 ms

  • N-channel 400 V, 0.85 Ω typ., 5.4 A SuperMESH Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 400 VID 5.4 A
    1 份文档
  • STI360N4F6车规级AEC-Q101

    Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • N-channel 40 V, 3.8 m , 80 A, TO-220 STripFET™ VI DeepGATE™ Power MOSFET

    厂商 意法半导体封装 TO-220VDS 40 VID 80 A
    1 份文档
  • N-channel 40 V, 0.0021 m typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • N-channel 400 V, 220 mΩ typ., 15 A SuperMESH Power MOSFET in a TO-220FP package

    厂商 意法半导体封装 TO-220FPVDS 400 VID 15 A
    1 份文档
  • N-channel 40 V, 2.1 m typ., 120 A STripFET™ F6 PowerMOSFETinaTO-220package

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • STP200N4F3已停产

    N-channel 40 V, 0.0025 , 120 A, D²PAK, TO-220 planar STripFET™ Power MOSFET

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • STP45N40DM2AG车规级AEC-Q101

    Automotive-grade N‑channel 400 V, 63 mΩ typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 400 VID 38 A
    1 份文档
  • High temperature 40 A SCRs

    厂商 意法半导体封装 TO-220AB封装 TO-220AB
    1 份文档
  • Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 40 mΩ封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-3L

    厂商 安森美封装 TO-247RDS(on) 40 mΩ封装 TO-247
    1 份文档
  • N-channel 100V - 0.028 - 40A TO-220 low gate charge STripFET™ Power MOSFET

    厂商 意法半导体封装 TO-220VDS 100 VID 40 A
    1 份文档
  • STP40NS15已停产

    N-channel 150 V - 0.042 Ω - 40 A TO-220 MESH OVERLAY™ MOSFET

    厂商 意法半导体封装 TO-220VDS 150 VID 40 A
    1 份文档
  • STP4N20已停产

    N-channel 200V - 1.3 - 4A TO-220 power MOS transitor

    厂商 意法半导体封装 TO-220封装 TO-220
    1 份文档
  • Silicon Carbide (SiC) MOSFET – EliteSiC,40 mohm, 1200 V, M1, TO-247-3L

    厂商 安森美封装 TO-247RDS(on) 40 mΩ封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 53 mohm

    厂商 安森美封装 TO247RDS(on) 53 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4,1200 V, 72 mohm

    厂商 安森美封装 TO247RDS(on) 72 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 23 mohm

    厂商 安森美封装 TO247RDS(on) 23 mΩ封装 TO247
    1 份文档
  • Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 30 mohm

    厂商 安森美封装 TO247RDS(on) 30 mΩ封装 TO247
    1 份文档