N-channel 400 V, 0.85 Ω typ., 5.4 A SuperMESH Power MOSFET in a TO-220 package
厂商 意法半导体封装 TO-2201 份文档Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages
厂商 意法半导体封装 TO-2201 份文档N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages
厂商 意法半导体封装 TO-2201 份文档- 1 份文档
N-channel 40 V, 0.0021 m typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package
厂商 意法半导体封装 TO-2201 份文档N-channel 400 V, 220 mΩ typ., 15 A SuperMESH Power MOSFET in a TO-220FP package
厂商 意法半导体封装 TO-220FP1 份文档N-channel 40 V, 2.1 m typ., 120 A STripFET™ F6 PowerMOSFETinaTO-220package
厂商 意法半导体封装 TO-2201 份文档- STP200N4F3已停产
N-channel 40 V, 0.0025 , 120 A, D²PAK, TO-220 planar STripFET™ Power MOSFET
厂商 意法半导体封装 TO-2201 份文档 Automotive-grade N‑channel 400 V, 63 mΩ typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package
厂商 意法半导体封装 TO-2201 份文档- 1 份文档
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N-channel 100V - 0.028 - 40A TO-220 low gate charge STripFET™ Power MOSFET
厂商 意法半导体封装 TO-2201 份文档- 1 份文档
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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 53 mohm
厂商 安森美封装 TO2471 份文档Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4,1200 V, 72 mohm
厂商 安森美封装 TO2471 份文档Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 23 mohm
厂商 安森美封装 TO2471 份文档Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 30 mohm
厂商 安森美封装 TO2471 份文档