MEMS single-axis satellite acceleration sensor with DSI 2.02 interface

MEMS inertial sensor 2-axis, low g accelerometer with digital output

Ultralow noise, wide bandwidth, 3-axis accelerometer with TDM interface for automotive applications

MEMS digital output motion sensor: ultra-low-power 3-axis accelerometer for automotive applications

MEMS digital output motion sensor: high-performance 3-axis accelerometer for automobile applications

High-performance ultra-low-power 3-axis accelerometer with digital output for automotive applications

High-performance motion sensor for automotive applications: ultra-low-power digital output 3-axis accelerometer

16 channel LED driver with error detection, current gain control and 12/16-bit PWM brightness control for automotive applications

ACEPACK 1 power module, fourpack topology, 1200 V, 25 mΩ typ. SiC MOSFET gen.2 with NTC

High-performance class-G stereo headphone amplifier

High-performance class-G stereo headphone amplifier with I²C

ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC

ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance

ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance

ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC

ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V

2 stages RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs

2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs