Memory module temperature sensor with a 2 Kb SPD EEPROM

960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers

Eight-Output Switch with Serial Peripheral Interface I/O

Eight-Output Switch with Serial Peripheral Interface I/O

Eight Output Switch with Serial Peripheral Interface I/O

32 kHz watch circuits with EEPROM

2.0 A Negative Voltage Hot Swap Controller with Enhanced Programmability

1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers

746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE, RF LDMOS Wideband Integrated Power Amplifier

1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

1930-1990 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

865-960 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs

1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA, RF LDMOS Wideband Integrated Power Amplifiers