- 1 份文档
- 1 份文档
Automotive-grade N-channel 650 V, 33 mΩ typ., 72 A MDmesh DM6 Power MOSFET in a TO247‑4 package
厂商 意法半导体封装 TO2471 份文档- 1 份文档
Automotive-grade N-channel 40 V, 4.3 m typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220
厂商 意法半导体封装 TO-2201 份文档Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages
厂商 意法半导体封装 TO-2201 份文档Automotive-grade N‑channel 400 V, 63 mΩ typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package
厂商 意法半导体封装 TO-2201 份文档- 1 份文档
Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package
厂商 意法半导体封装 TO-2471 份文档Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT and ultra-low reverse losses in a TO-247 long leads package
厂商 意法半导体封装 TO-2471 份文档Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package
厂商 意法半导体封装 TO-2471 份文档Automotive-grade N‑channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package
厂商 意法半导体封装 TO-2201 份文档Automotive-grade N‑channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package
厂商 意法半导体封装 TO-2471 份文档Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247‐4L
厂商 安森美封装 TO2471 份文档- 1 份文档
Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4L
厂商 安森美封装 TO-2471 份文档- 1 份文档
- 1 份文档
Automotive N-channel 55 V, 6.5 mΩ typ., 80 A STripFET II Power MOSFETs in D²PAK and TO-220 packages
厂商 意法半导体封装 TO-2201 份文档Automotive-grade N-channel 600 V, 37 mΩ typ., 54 A MDmesh DM9 Power MOSFET in an HU3PAK package
厂商 意法半导体封装 TO-2471 份文档