“4” 共 38 个型号· 14 ms

  • STPSC40H12C-Y车规级AEC-Q101

    40 A 1200 V power Schottky silicon carbide diode

    厂商 意法半导体封装 TO-247工作温度 -40 ~ 175 °C封装 TO-247
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  • TN4050HP-12WY车规级AEC-Q101

    40 A 1200 V automotive grade thyristor (SCR)

    厂商 意法半导体封装 TO-247封装 TO-247
    1 份文档
  • STW68N65DM6-4AG车规级AEC-Q101

    Automotive-grade N-channel 650 V, 33 mΩ typ., 72 A MDmesh DM6 Power MOSFET in a TO247‑4 package

    厂商 意法半导体封装 TO247VDS 650 VID 72 A
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  • NSS40302P车规级AEC-Q101

    Complementary 40 V, 6.0 A, Low VCE(sat) Transistor

    厂商 安森美封装 SOIC-8封装 SOIC-8
    1 份文档
  • STB100NF04T4车规级AEC-Q101

    Automotive-grade N-channel 40 V, 4.3 m typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • STI360N4F6车规级AEC-Q101

    Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • STP45N40DM2AG车规级AEC-Q101

    Automotive-grade N‑channel 400 V, 63 mΩ typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 400 VID 38 A
    1 份文档
  • NSS40300MD车规级AEC-Q101

    Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor

    厂商 安森美封装 SOIC-8封装 SOIC-8
    1 份文档
  • GWA40MS120DF4AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA40MS120DLAG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT and ultra-low reverse losses in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA40MS120F4AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • STP45N60DM2AG车规级AEC-Q101

    Automotive-grade N‑channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 600 VID 34 A
    1 份文档
  • STW45N60DM2AG车规级AEC-Q101

    Automotive-grade N‑channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package

    厂商 意法半导体封装 TO-247VDS 600 VID 34 A
    1 份文档
  • NVH4L012N065M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247‐4L

    厂商 安森美封装 TO247RDS(on) 12 mΩ封装 TO247
    1 份文档
  • NVH4L016N065M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET

    厂商 安森美封装 TO247封装 TO247
    1 份文档
  • NVH4L022N120M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4L

    厂商 安森美封装 TO-247RDS(on) 22 mΩ封装 TO-247
    1 份文档
  • NVH4L023N065M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET

    厂商 安森美封装 TO-247封装 TO-247
    1 份文档
  • NVH4L032N065M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET

    厂商 安森美封装 TO-247封装 TO-247
    1 份文档
  • STB141NF55车规级AEC-Q101

    Automotive N-channel 55 V, 6.5 mΩ typ., 80 A STripFET II Power MOSFETs in D²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 55 VID 80 A
    1 份文档
  • STHU60N046DM9AG车规级AEC-Q101

    Automotive-grade N-channel 600 V, 37 mΩ typ., 54 A MDmesh DM9 Power MOSFET in an HU3PAK package

    厂商 意法半导体封装 TO-247VDS 600 VID 54 A
    1 份文档