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- MWE6IC9100N停产通知
960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers
厂商 恩智浦1 份文档 - 1 份文档
N‑channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package
厂商 意法半导体封装 TO-220FP1 份文档- 1 份文档
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N‑channel 950 V, 680 mΩ typ., 10 A MDmesh K3 Power MOSFET in a TO-220FP, TO-220 and TO-247 packages
厂商 意法半导体封装 TO-220FP1 份文档N‑channel 900 V, 600 mΩ typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package
厂商 意法半导体封装 TO-220FP1 份文档- 1 份文档
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