STPSC6G065

Name: STPSC6G065
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件工作温度 -55 ~ 175 °CVDS 650 VID 6 A

650 V, 6 A high surge silicon carbide power Schottky diode

STPSC6G065 主要参数

来源：原厂数据手册

1 份文档

0 个

暂未收录 STPSC6G065 的替代料信息。

价格与库存以渠道为准

MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG212220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG610High voltage and high-speed half-bridge gate driver for GaN power switches
STDRIVEG611High voltage and high-speed half-bridge gate driver for GaN power switches
GANSPIN611High-voltage half-bridge GaN motor driver
M2TP80M12W2-2LAAutomotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
MASTERGAN6650 V GaN half-bridge with gate driver and protections
STDRIVEG600High voltage half-bridge gate driver for GaN transistors
STDRIVEG600WHigh voltage half-bridge gate driver for GaN transistors

STPSC6G065D