MRF19120

Name: MRF19120
Brand: NXP

停产通知射频功率器件

1990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET

技术文档

1 份文档

0 个

暂未收录 MRF19120 的替代料信息。

价格与库存以渠道为准

MRF101ANMRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet
MRF1047T1 Technical Data Sheet
MRF13750H750 W CW, 700-1300 MHz, 50 V Data Sheet
MRF15090Archived
MRF1511175 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1511NT1 175 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1513520 MHz, 3 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1513NT1 520 MHz, 3 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1517520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET
MRF1517NT1 520 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1518520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET
MRF1518NT1 520 MHz, 8 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFET
MRF1535NT1, MRF1535FNT1, 520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs
MRF1535T1520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs
MRF1550NT1, MRF1550FNT1, 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs
MRF1550T1175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs
MRF1570NT1, MRF1570FNT1, 470 MHz, 70 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs
MRF1570T1470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs
MRF18030A1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
MRF18030A-11800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

MRF18060A-21805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET
MRFG35002N63.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT
A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
AFIC901N30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet
MHL183361800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier
MHL199261930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier
MHL21336NN2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier
MHV5IC1810NR2 1805-1990 MHz, 5 W Avg., 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier
MHVIC910HR2960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit
MMRF1004N1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
MMRF1005H1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs