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收录 12,470 个型号原厂官网

共 259 个型号· 3 ms

  • Quad Driver

    封装 PDIP-16封装 PDIP-16
    1 份文档
  • 封装 TO-263封装 TO-263
    1 份文档
  • P-Channel Logic Level Enhancement Mode Field Effect Transistor

    封装 TO-220封装 TO-220
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

    封装 TO-247封装 TO-247
    1 份文档
  • IGBT – Field Stop II

    封装 TO-247封装 TO-247
    1 份文档
  • Complementary ThermalTrak™ Transistors

    封装 TO-264封装 TO-264
    1 份文档
  • MOSFET – Power, N‐Channel, SUPERFET III®, FRFET® 650 V, 40 A, 82 mΩ

    封装 TO-220VDS 650 VID 40 A
    1 份文档
  • MOSFET – Power, N‐Channel, SUPERFET® III, FRFET™ 650 V, 36 A, 95 mΩ

    封装 TO-220VDS 650 VID 36 A
    1 份文档
  • MOSFET – Power, N‐Channel, SUPERFET® III 800 V, 360 mΩ, 13 A

    封装 TO-220VDS 800 VID 13 A
    1 份文档
  • Preferred Device

    封装 TO264封装 TO264
    1 份文档
  • Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

    封装 TO-247RDS(on) 12 mΩ封装 TO-247
    1 份文档
  • NVH4L032N065M3S车规级AEC-Q101

    Silicon Carbide (SiC) MOSFET

    封装 TO-247封装 TO-247
    1 份文档
  • Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L

    封装 TO-247RDS(on) 32 mΩ封装 TO-247
    1 份文档
  • PCRA49411K6车规级AEC-Q101

    KGD Stealth Rectifier

    封装 TO220封装 TO220
    1 份文档
  • / MMBT200 — PNP General-Purpose Amplifier

    封装 TO-92封装 TO-92
    1 份文档