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LMG3411R050

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LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B)

Manufacturer: Texas Instruments
Datasheet: 37 pages · 1.1 MB
Website: www.ti.com

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Technical Documents

4 documents

Datasheet

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B)
37 pages1.1 MB BookmarkedTI-LMG3411R050.pdf

User manual

Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-BB-EVM Breakout Board EVM (Rev. A)This series
25 pages3.6 MB Bookmarkedsnou140a.pdf
Using the LMG341xEVM-018 Half-bridge and LMG34XX-BB--EVM breakout board EVM (Rev. A)This series
22 pages8.4 MB Bookmarkedsnou165a.pdf

Application note

Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC
6 pages668 KBslyt801.pdf

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Order codes / Aliases

LMG3411R050RWHRLMG3411R050RWHTLMG3411R050RWHTG4