Skip to main content

MRFG35003M6T1

EOL noticeRF Power

3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT

Manufacturer: NXP
Datasheet: 12 pages · 175 KB
Website: www.nxp.com

Wrong information or a copyright issue? Let us know

Technical Documents

1 document

Datasheet

MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
12 pages175 KBNXP-MRFG35003M6T1.pdf

Alternatives

0 parts

No alternatives listed for MRFG35003M6T1 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

MRFG35003ANT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
MRFG35003MT13.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
MRFG35003N3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
MRFG35003N63.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
MRFG35003N6AT1, 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT

More from NXP

MRF18060A-21805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET
MRFG35002N63.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT
MRFG35010N3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
A2I08H040N728-960 MHz, 9 W Avg, 28 V Data Sheet
A2I20H060N1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I25D025N2100-2900 MHz, 3.2 W Avg., 28 V Airfast RF LDMOS Wideband Integrated Power Amplifier Data Sheet
A2I25H060N2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
A2T08VD020N728-960 MHz, 2 W Avg, 48 V Data Sheet
A2T18S166W12S1805-1995 MHz, 38 W Avg, 28 V Data Sheet
A2T18S261W12N1805-1880 MHz, 56 W Avg, 28 V Data Sheet
A2T21H360-24SR6 2110-2170 MHz, 63 W Avg., 28 V Airfast RF Power LDMOS Transistor Data Sheet
A2T21S160-12S2110-2170 MHz, 38 W Avg, 28 V Airfast RF Power LDMOS Transistor Data Sheet