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MRF6S18060

EOL noticeRF Power

1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Manufacturer: NXP
Datasheet: 20 pages · 752 KB
Website: www.nxp.com

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Technical Documents

1 document

Datasheet

MRF6S18060MR1, MRF6S18060MBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived
20 pages752 KBNXP-MRF6S18060.pdf

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Same Series

MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
MRF6S18100NR1, MRF6S18100NBR1 1805-1990 MHz, 100 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
MRF6S18140H1805-1880 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19060NR1, MRF6S19060NBR1 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19100HR3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19100NR1, MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19120H1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19200HR3, MRF6S19200HSR3 1930-1990 MHz, 56 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

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Order codes / Aliases

MRF6S18060MBR1MRF6S18060MR1