Skip to main content

GAN190-650EBEZ

Unknown

650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Manufacturer: Nexperia
Datasheet: 14 pages · 7.9 MB

Wrong information or a copyright issue? Let us know

Technical Documents

1 document

Datasheet

650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
14 pages7.9 MB BookmarkedNEXPERIA-GAN190650EBEZ.pdf

Alternatives

0 parts

No alternatives listed for GAN190-650EBEZ yet.

Where to buy

Prices and stock are set by each distributor

Same Series

GAN190-650FBEZ650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

More from Nexperia

GAN3R2-100CBEAZ100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
GAN7R0-150LBEZ150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
GANB012-040CBAZ40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)
GANB1R2-040QBAZ40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
GANE1R8-100QBAZ100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
GANE7R0-100CBAZ100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP)
HEC4013BTHEF4013B Dual D-type flip-flop
HEC4066BT-Q100118Quadruple bilateral switches
HEC4069UBTHEF4069UB Hex inverter
HEF4001BTQuad 2-input NOR gate
HEF4001BT118HEF4001B Quad 2-input NOR gate
HEF4001BT-Q100JQuad 2-input NOR gate

Order codes / Aliases

GAN190650GAN190650EGAN190650EBGAN190650EBE