IGBT / 功率模块

共 426 个型号

共 233 个型号· 384 ms

  • ESM2030DV已停产

    NPN Darlington power module

    1 份文档
  • NPN Darlington power module

    1 份文档
  • ESM4045DV已停产

    NPN Darlington power module

    1 份文档
  • ESM5045DV已停产

    NPN Darlington power module

    1 份文档
  • ESM6045AV已停产

    NPN Darlington power module

    1 份文档
  • NPN Darlington power module

    1 份文档
  • GWA40MS120DF4AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA40MS120DLAG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT and ultra-low reverse losses in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA40MS120F4AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 75 A
    1 份文档
  • GWA75H65DRFB2AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 75 A
    1 份文档
  • Automotive-grade N-channel 650 V, 89 mΩ typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package

    厂商 意法半导体封装 ACEPACKVDS 650 VID 32 A
    1 份文档
  • Automotive-grade N-channel 650 V, 56 mΩ typ., 53 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package

    厂商 意法半导体封装 ACEPACKVDS 650 VID 53 A
    1 份文档
  • Automotive-grade N-channel 650 V, 35 mΩ typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package

    厂商 意法半导体封装 ACEPACKVDS 650 VID 64 A
    1 份文档
  • 1 份文档
  • Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing

    厂商 意法半导体VDS 1200 VID 15 A
    1 份文档
  • Trench gate field-stop, 650 V, 15 A, low-loss M series IGBT die in D7 packing

    厂商 意法半导体VDS 650 VID 15 A
    1 份文档
  • STG200M65F2D11AG车规级AEC-Q101

    Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing

    厂商 意法半导体VDS 650 VID 200 A
    1 份文档
  • STG200M65F2D8AG车规级AEC-Q101

    Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

    厂商 意法半导体VDS 650 VID 200 A
    1 份文档
  • 650 V, 20 A trench gate field-stop M series low-loss IGBT die in D7 packing

    厂商 意法半导体VDS 650 VID 20 A
    1 份文档