Complementary transistor pair in a single package

MOSFET – Power, Dual, N-Channel, DFN6 3X3 mm 20 V, 5.8 A/4.6 A

MOSFET – Power, Dual N-Channel, DUAL SO8FL

MOSFET – Power, Dual N-Channel, DUAL SO8FL 60 V, 27 A, 20.3 mΩ

MOSFET – Power, Dual N‐Channel, DUAL SO8FL 60 V, 29.7 mΩ, 19 A

MOSFET – Power, Dual, N-Channel with Integrated Schottky, SO8FL 30 V, High Side 18 A / Low Side 23 A

MOSFET-Power, Dual, N-Channel, SO8FL 30 V, High Side 18 A / Low Side 27 A

MOSFET – Power, Dual, N-Channel, Logic Level, Dual SO8FL 60 V, 39 m , 17 A

MOSFET – Power, Dual, N-Channel 40 V, 2.65 mΩ, 145 A

MOSFET-Power, Dual, N-Channel 40 V, 4.7 mΩ, 84 A

MOSFET – Power, Dual, N-Channel 40 V, 8.1 mΩ, 49 A

MOSFET – Power, Dual, N-Channel 40 V, 7.4 mΩ, 52 A

MOSFET – Power, Dual, N-Channel 40 V, 11.5 mΩ, 36 A

MOSFET – Power, Dual, N-Channel 60 V, 4.2 mΩ, 111 A

MOSFET – Power, Dual, N-Channel 60 V, 11.9 mΩ, 49 A

MOSFET - Power, Dual, N-Channel 60 V, 28 mΩ, 26 A

MOSFET – Power, Dual, N-Channel 80 V, 15 mΩ, 31 A

MOSFET - Power, Dual N-Channel

MOSFET - Power, Dual N-Channel, SO-8FL, 60 V, 16.3 mohm, 32 A

MOSFET - Power, Dual N‐Channel, DUAL SO8FL 60 V, 20.3 mΩ, 27 A