NPN Epitaxial Silicon Transistor

N‑channel 650 V, 275 mΩ typ., 12 A MDmesh M2 Power MOSFET in an I²PAK and TO-220 packages

Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages

N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages

Emitter switched bipolar transistor ESBT® 1700V - 6A - 0.15 Ohm

Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ohm

Emitter switched bipolar transistor ESBT® 1500V - 8A - 0.08

1.25V 至 37V 可调、1.5A 三端线性稳压器

Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT and ultra-low reverse losses in a TO-247 long leads package

Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

20 A - 600 V - short circuit rugged IGBT

600 V, 20 A very high speed trench gate field-stop IGBT

6 A, 600 V hyper fast IGBT

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package