“3” 共 535 个型号· 284 ms

排序相关度热度型号 A-Z
TO 清除筛选
  • TN3015H-6I

    High temperature 30 A, 600 V TO220 insulated thyristor SCRs

    厂商 意法半导体封装 TO220封装 TO220
    1 份文档
  • TN3015H-6T

    High temperature 30 A, 600 V TO220 thyristor SCRs

    厂商 意法半导体封装 TO220封装 TO220
    1 份文档
  • STB30NF10

    N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET II POWER MOSFET

    厂商 意法半导体封装 TO-220VDS 100 VID 35 A
    1 份文档
  • STD30NE06L

    N-channel 60V - 0.025 - 30A TO-252 STripFET™ Power MOSFET

    厂商 意法半导体封装 TO-252VDS 60 VID 30 A
    1 份文档
  • STP30NF20

    N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET™ Power MOSFET

    厂商 意法半导体封装 TO-220VDS 200 VID 30 A
    1 份文档
  • STW30NM60D已停产

    N-channel 600V - 0.125Ω - 30A - TO-247 fast diode MDmesh™ Power MOSFET

    厂商 意法半导体封装 TO-247VDS 600 VID 30 A
    1 份文档
  • STW34NB20已停产

    N-channel 200V - 0.062 Ohm - 34A TO-247 PowerMESH™ MOSFET

    厂商 意法半导体封装 TO-247VDS 200 VID 34 A
    1 份文档
  • STF3NK80Z

    N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in a TO-220FP package

    厂商 意法半导体封装 TO-220FPVDS 800 VID 2.5 A
    1 份文档
  • STP3NK80Z

    N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 800 VID 2.5 A
    1 份文档
  • STP3NK90Z

    N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 900 VID 3 A
    1 份文档
  • STP3NK90ZFP

    N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a TO-220FP package

    厂商 意法半导体封装 TO-220FPVDS 900 VID 3 A
    1 份文档
  • UF3C065030K3S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 27 mohm

    厂商 安森美封装 TO247-3RDS(on) 27 mΩ封装 TO247-3
    1 份文档
  • UF3C065030T3S

    Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 27 mohm

    厂商 安森美封装 TO220RDS(on) 27 mΩ封装 TO220
    1 份文档
  • UF3C065040T3S

    Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 42 mohm

    厂商 安森美封装 TO220RDS(on) 42 mΩ封装 TO220
    1 份文档
  • UF3C065080K3S

    Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐3, 650 V, 80 mohm

    厂商 安森美封装 TO247RDS(on) 80 mΩ封装 TO247
    1 份文档
  • UF3C065080T3S

    Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 80 mohm

    厂商 安森美封装 TO220RDS(on) 80 mΩ封装 TO220
    1 份文档
  • UF3C120040K3S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 35 mohm

    厂商 安森美封装 TO247-3RDS(on) 35 mΩ封装 TO247-3
    1 份文档
  • UF3C120080K3S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 80 mohm

    厂商 安森美封装 TO247-3RDS(on) 80 mΩ封装 TO247-3
    1 份文档
  • UF3C120400K3S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 410 mohm

    厂商 安森美封装 TO247-3RDS(on) 410 mΩ封装 TO247-3
    1 份文档
  • UF3C170400K3S

    Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1700 V, 410 mohm

    厂商 安森美封装 TO247-3RDS(on) 410 mΩ封装 TO247-3
    1 份文档