This Power MOSFET is produced using ON Semiconductor’s trench

This Power MOSFET is produced using ON Semiconductor’s trench

This Power MOSFET is produced using ON Semiconductor’s trench

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Preferred Device

Preferred Device

Small Signal MOSFET

Voltage Regulator - Low-Dropout, Power Good 5.0 V, 450 mA

Voltage Regulator – Low Dropout, Reset, Sense 5.0 V, 100 mA

Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.50 V at IF = 5 A

Power MOSFET −60 V, 16 mΩ, −60 A, P-Channel

MOSFET - Power, Single N-Channel, SuperFET V, FRFET, D2PAK, 600 V, 55 mohm, 45 A

MOSFET - Power, Single N-Channel, D2PAK 650 V, 110 mOhm, 30 A

MOSFET – Power, N‐Channel, SUPERFET® III, Automotive, Easy‐drive 650 V, 24 A, 125 mΩ

MOSFET - Power, Single N−Channel, 650 V, 150 mOhm, 24 A

MOSFET - Power 650 V, 190 mOhm, 20 A, Single N-Channel, D2PAK

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L