1, MHW1810-2 Data Sheet

1 Data Sheet

1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETS

1.0 GHz, 30 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

1.0 GHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

1.0 GHz, 85 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

1.0 GHz, 120 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

1.0 GHz, 85 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET

1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET

1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

1920-2000 MHz, 40 W, 28 V, 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

1800-1900 MHz, 4 W, 30 dB RF Linear LDMOS Amplifier

1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier

1805-1880 MHz, 10 W, 28.6 dB RF Linear LDMOS Amplifier

1805-1880 MHz, 10 W, 28.6 dB RF Linear LDMOS Amplifier

1900-2000 MHz, 4.0 W, 30 dB RF Linear LDMOS Amplifier