“T” 共 67 个型号· 56 ms

排序相关度热度型号 A-Z
AEC-Q101 DFN DIP TO 清除筛选
  • TN3050H-12WY车规级AEC-Q101

    30 A, 1200 V automotive grade SCR Thyristor

    厂商 意法半导体封装 TO-247封装 TO-247
    1 份文档
  • TN4050HP-12WY车规级AEC-Q101

    40 A 1200 V automotive grade thyristor (SCR)

    厂商 意法半导体封装 TO-247封装 TO-247
    1 份文档
  • TN5050H-12WY车规级AEC-Q101

    50 A 1200 V automotive grade thyristor (SCR)

    厂商 意法半导体封装 TO-247封装 TO-247
    1 份文档
  • TN6050HP-12WY车规级AEC-Q101

    60 A 1200 V automotive grade thyristor (SCR)

    厂商 意法半导体封装 TO-247封装 TO-247
    1 份文档
  • STB100NF04T4车规级AEC-Q101

    Automotive-grade N-channel 40 V, 4.3 m typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • STB141NF55车规级AEC-Q101

    Automotive N-channel 55 V, 6.5 mΩ typ., 80 A STripFET II Power MOSFETs in D²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 55 VID 80 A
    1 份文档
  • STB36NF06L车规级AEC-Q101

    Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 60 VID 30 A
    1 份文档
  • STGWA30M65DF2AG车规级AEC-Q101

    Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 30 A
    1 份文档
  • STGWA50M65DF2AG车规级AEC-Q101

    Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 50 A
    1 份文档
  • STGWA60V60DWFAG车规级AEC-Q101

    Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

    厂商 意法半导体封装 TO-247VDS 600 VID 60 A
    1 份文档
  • STGWA80H65DFBAG车规级AEC-Q101

    Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

    厂商 意法半导体封装 TO-247VDS 650 VID 80 A
    1 份文档
  • STGWA80H65FBAG车规级AEC-Q101

    Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

    厂商 意法半导体封装 TO-247VDS 650 VID 80 A
    1 份文档
  • STHU32N65DM6AG车规级AEC-Q101

    Automotive-grade N-channel 650 V, 83 mΩ typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

    厂商 意法半导体封装 TO-247VDS 650 VID 37 A
    1 份文档
  • STHU60N046DM9AG车规级AEC-Q101

    Automotive-grade N-channel 600 V, 37 mΩ typ., 54 A MDmesh DM9 Power MOSFET in an HU3PAK package

    厂商 意法半导体封装 TO-247VDS 600 VID 54 A
    1 份文档
  • STHU65N050DM9AG车规级AEC-Q101

    Automotive-grade N-channel 650 V, 38 mΩ typ., 51 A MDmesh DM9 Power MOSFET in an HU3PAK package

    厂商 意法半导体封装 TO-247VDS 650 VID 51 A
    1 份文档
  • STI360N4F6车规级AEC-Q101

    Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages

    厂商 意法半导体封装 TO-220VDS 40 VID 120 A
    1 份文档
  • STP150N10F7AG车规级AEC-Q101

    Automotive N-channel 100 V, 3.6 mΩ typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 100 VID 110 A
    1 份文档
  • STP315N10F7车规级AEC-Q101

    Automotive-grade N-channel 100 V, 2.3 m typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 100 VID 180 A
    1 份文档
  • STP45N40DM2AG车规级AEC-Q101

    Automotive-grade N‑channel 400 V, 63 mΩ typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 400 VID 38 A
    1 份文档
  • STP45N60DM2AG车规级AEC-Q101

    Automotive-grade N‑channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 600 VID 34 A
    1 份文档