1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

2170 MHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Wideband Integrated Power Amplifier

870 MHz, 19 dB Gain, 132-Channel CATV Integrated Amplifier Module

870 MHz, 21 dB Gain, 132-Channel, CATV Integrated Amplifier Module

849 MHz, 38 dBm, 12.5 V High Frequency Power Transistor LDMOS FET

746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE, RF LDMOS Wideband Integrated Power Amplifier

175 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET

520 MHz, 3 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFET

520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET

520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET

520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs

175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs

470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs

1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET

1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET

1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET