Quad inverting transistor switch

4 Kbit, 2 Kbit and 1 Kbit serial MICROWIRE bus EEPROM with write protection

105 °C Operation

8-Kbit serial SPI bus EEPROM - 105 °C Operation

128-Kbit serial SPI bus EEPROM - 105 °C operation

16-Kbit serial SPI bus EEPROM - 105 °C Operation

256-Kbit serial SPI bus EEPROM - 105 °C operation

32-Kbit serial SPI bus EEPROM -105 °C Operation

512-Kbit serial SPI bus EEPROM - 105 °C operation

64-Kbit serial SPI bus EEPROM - 105°C operation

8-bit OTP/EPROM MCUs with A/D converter, 16-bit auto-reload timer, EEPROM, SPI and UART

Electronic switch for 12 V, 5 V and 3.3 V buses

Memory module temperature sensor with a 2 Kb SPD EEPROM

MOSFET – Power, Dual, N-Channel, DFN6 3X3 mm 20 V, 5.8 A/4.6 A

MOSFET — Power, P-Channel, Schottky Diode, Schotty Barrier Diode, FETKY, DFN6 -20 V, -3.9 A, 2.0 A

MOSFET – Power, Dual N-Channel, DUAL SO8FL

MOSFET – Power, Dual N-Channel, DUAL SO8FL 60 V, 27 A, 20.3 mΩ

MOSFET – Power, Dual N‐Channel, DUAL SO8FL 60 V, 29.7 mΩ, 19 A

MOSFET — Power, Dual, N-Channel with Integrated Schottky, SO8FL 30 V, High Side 18 A / Low Side 30 A

MOSFET – Power, Dual, N-Channel with Integrated Schottky, SO8FL 30 V, High Side 18 A / Low Side 23 A