ESD, overvoltage and overcurrent protection with charging orientation direction detection for wearables and IoT

ESD, overvoltage and overcurrent protection with charging orientation direction detection for wearables applications

Small signal NPN transistor

Rad-Hard 50 V, 0.8 A NPN transistor

600 Watt Peak Power Zener Transient Voltage Suppressor Unidirectional*

REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO)

REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO)

Rad-hard 150 V, 6 A ultrafast rectifier in SOD128Flat package

Rad-hard 45 V, 1 A Schottky rectifier in SOD128Flat package

Rad-hard 40 V, 3 A Schottky rectifier in SOD128Flat package

N-channel 250 V, 14.5 mΩ typ., 85 A MDmesh M9 Power MOSFET in a TO‑LL package

N‑channel 100 V, 1.6 mΩ max., 366 A STripFET F8 Power MOSFET in a TO‑LL package

Automotive N‑channel 100 V, 1.6 mΩ max., 366 A STripFET F8 Power MOSFET in a TO‑LL package

N‑channel 60 V, 0.85 mΩ max., 545 A STripFET F7 Power MOSFET in a TO‑LL package

N-channel 600 V, 23 mΩ typ., 74 A MDmesh M9 Power MOSFET in a TO‑LL package

N-channel 600 V, 24 mΩ typ., 72 A MDmesh DM9 Power MOSFET in a TO‑LL package

N‑channel 600 V, 35 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO‑LL package

N-channel 650 V, 24.7 mΩ typ., 72 A MDmesh M9 Power MOSFET in a TO‑LL package

N‑channel 600 V, 46 mΩ typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package

N-channel 600 V, 45 mΩ typ., 57 A MDmesh M6 Power MOSFET in a TO‑LL package