Quad inverting transistor switch

MOSFET – Power, Dual, N-Channel with Integrated Schottky, SO8FL 30 V, High Side 18 A / Low Side 23 A

MOSFET-Power, Dual, N-Channel, SO8FL 30 V, High Side 18 A / Low Side 27 A

MOSFET – Power, Dual, N-Channel 40 V, 8.1 mΩ, 49 A

MOSFET – Power, Dual, N-Channel 40 V, 11.5 mΩ, 36 A

MOSFET – Power, Dual, N-Channel 80 V, 15 mΩ, 31 A

MOSFET - Power, Single N-Channel

MOSFET – Power, Single N-Channel, SO-8FL 30 V, 0.65 mΩ, 409 A

MOSFET - Power, Single N-Channel, SO8FL, 40 V, 1.05 mohm, 233 A

MOSFET - Power, Single N-Channel, SO8FL, 40 V, 1.3 mohm, 195 A

MOSFET - Power, Single N-Channel, STD Gate, SO8FL

MOSFET - Power, Single N-Channel, STD Gate SO-8FL, 80 V, 1.9 mohm, 201 A

MOSFET – Power, Single N-Channel, STD Gate, SO8FL

MOSFET - Power, Single N-Channel, STD Gate, SO8FL

MOSFET – Power 40 V, 111 A, 4.2 m

MOSFET-Power, Single N-Channel

MOSFET – Power, Single, N-Channel 40 V, 0.8 mΩ, 353 A

MOSFET-Power, Single N-Channel

MOSFET – Power, Single, N-Channel 40 V, 2.5 mΩ, 130 A

MOSFET-Power, Single, N-Channel 40 V, 3.3 mΩ, 102 A