High temperature 4 A sensitive TRIACs

Complementary power transistors

Complementary power transistors

40 A - 600 V - ultra fast IGBT

40 A - 600 V - ultra fast IGBT

40 A 1200 V power Schottky silicon carbide diode

40 A 600 V 150 °C junction temperature SCR in TO-220AB package

40 A 800 V high temperature SCR thyristors in insulated TO-220I package

40 A 800 V high temperature SCR thyristors in TO-220 package

40 A 1200 V automotive grade thyristor (SCR)

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package

N-channel 600 V, 61 mΩ typ., 39 A, MDmesh M6 Power MOSFET in a TO247‑4 package

N-channel 650 V, 37 mΩ typ., 58 A MDmesh M9 Power MOSFET in a TO247-4 package

N-channel 650 V, 39 mΩ typ., 54 A MDmesh M9 Power MOSFET in a TO247-4 package

Automotive-grade N-channel 650 V, 33 mΩ typ., 72 A MDmesh DM6 Power MOSFET in a TO247‑4 package

Automotive-grade N-channel 40 V, 4.3 m typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220

N-channel 400 V, 0.85 Ω typ., 5.4 A SuperMESH Power MOSFET in a TO-220 package

Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages

N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages